Double-Gate(DG) FinFET based sense amplifier

Project Discription

In this paper, we propose a new independent-gate, process-variation-tolerant double-gate (DG) FinFET
based sense amplifier design. The new design exploits the DICE (dual interlock cell) latch and the back
gate of a double-gate FinFET (DG FinFET) device for dynamic compensation against process variation.
The proposed design improves the sensing delay and show excellent tolerance to process variations as
compared to independent-gate sense amplifier (IGSA). The primary advantage of the proposed amplifier
over previously reported sense amplifier is the low-noise voltage and large critical charge, making it more
stable against single event upsets. Failure probability of the proposed design against process parameter
variations is analyzed through Monte Carlo analysis.

Project Sample Image